Reliable High-Performance Amorphous InGaZnO Schottky Barrier Diodes With Silicon Dioxide Passivation Layer

Sputtered amorphous indium-gallium-zinc -oxide (a-IGZO) Schottky barrier diodes (SBDs) were comparatively investigated without and with a passivation layer (PL). The a-IGZO SBDs without PLs were found to be highly unstable in the atmosphere and under electrical stress. During the implementation of silicon dioxide (SiO
₂
) PL, the associated thermal oxidization and hydrogen doping resulted in high-performance metrics, including an ideality factor close to the unity, a high Schottky barrier of 0.82 eV, and a large current rectification ratio of over 10
⁸
. Benefited from the PL protection and ideal Schottky contact, the environmental and electrical stabilities of SBDs were significantly enhanced.