Ferroelectric Thickness Dependent Characteristics of Negative Capacitance Transistors

In this work, we investigate the performance of a Hafnium Zirconium oxide (Hf
_0.5
Zr
_0.5
O
₂
) based double gate (DG) metal-ferroelectric-metal-insulator-semiconductor (MFMIS) negative capacitance (NC) field effect transistor (FET) by considering ferroelectric thickness dependent remnant polarization and coercive field. The proposed approach facilitates an insightful and accurate estimation of device characteristics which will be useful for design optimization of MFMIS NCFET architectures.