Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength

Summary form only given. We have investigated various characteristics of a gain switched InGaAlP Fabry-Perot semiconductor laser operating at 650 nm wavelength for short distance ultra fast optical transmission applications. Optimum gain switching conditions, such as optimum DC bias current value for generation of shortest optical pulse for a given repetition rate, are studied in detail with this laser. The shortest optical pulse was 33.279 psec with this laser. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers.