Tunable Alloying Improved Wide Spectrum UV-Vis-NIR and Polarization-Sensitive Photodetector Based on Sb–S–Se Nanowires

Polarization-sensitive photodetector based on low-dimensional semiconductor is a kind of special photoelectric device which can take advantage of the semiconductor’s anisotropy and convert it into an electrical signal. However, the polarization performance of the photodetector is limited by the challenges of the anisotropy of semiconductors. The design of alloy semiconductors with excellent anisotropy is one of the mainstream methods to improve the dichroic ratio of the polarization-sensitive photodetector. Here, we design the tunable alloying Sb–S–Se nanowires (NWs), which can be used in the research field of polarization-sensitive photodetectors because of their low symmetry crystal structure, suitable bandgap, and high mobility. It is demonstrated that the metal-semiconductor-metal polarization-sensitive photodetector based on Sb–S–Se NWs has great photoelectric properties and polarization performance in UV–Vis-near-infrared response (NIR) spectrum. Under the irradiation laser of the 532-nm, the photoresponsivity ( ${R}$ ) and detectivity ( ${D}$ *) of the Sb₂(S_1/3Se_2/3)₃ NW-based polarization-sensitive photodetector can reach 6.38 A/W and 1.63 $\times 10^{9}$ Jones. By investigating the polarization characteristics of the photodetector, the dichroic ratio of the photodetector can reach 3.8 at 532 nm. By regulating the proportion of each component in the alloy semiconductor, an effective method is provided for adjusting the photoresponse spectrum and optimizing the performance of the polarization-sensitive photodetector, which has a promising research prospect in the future.