How to Choose the Optimal GaN-HEMT for a Hard Switching Application – A Guide

Modern GaN-HEMTs offer beneficial advantages over traditional Si-MOSFETs. GaN-HEMTs exhibit much lower stored charge (QOSS) while providing identical conduction losses (RDS;On). However, choosing the right switch is not straight forward and the non-linear relation of voltage and charge has to be taken into account. This paper presents a guide on how to select the right switch to minimize conduction and switching losses considering the crucial influence of all switches on the switching losses.