All SiC Module with 1700V Rated 2nd Generation Trench Gate SiC-MOSFETs

Recently, the demand for downsizing and higher efficiency of power conversion systems has been increasing in order to realize a low carbon society. For this reason, enhancing power density of power semiconductor modules is an important factor to achieve this goal. We developed electrical characteristics for a newly developed 1700V/300A All SiC module with 2nd generation trench gate SiC-MOSFETs (Silicon Carbide, Metal Oxide Semiconductor Field Effect Transistors). It has been demonstrated that a significant increase of output power in power conversion units could be achieved by using the All SiC module compared with conventional Si-IGBT (Silicon, Insulated Gate Bipolar Transistors) modules.