Fabrication of device-related GaN/(Al,Ga)N heterostructures on SiC(0001) by reactive MBE

High quality GaN/(Al,Ga)N based heterostructures have been grown on SiC(0001) by reactive molecular beam epitaxy (RMBE) using ammonia as nitrogen precursor. These multilayer structures exhibit atomically smooth surfaces and abrupt interfaces. Based on this achievement, we study here the capability of RMBE to fabricate devices requiring abrupt interfaces, namely, distributed Bragg reflectors (DBRs) and heterostructure field-effect transistors (HFETs).