Vapor phase synthesis of polycrystalline II-VI semiconductor nanoparticles in a counterflow jet reactor

This paper addresses the vapor-phase synthesis of polycrystalline ZnSe nanoparticles. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and collected by impact on a silicon wafer. The precursors used in this study were vapors of (CH/sub 3/)/sub 2/Zn:[N(C/sub 2/H/sub 5/)/sub 3/]/sub 3/ and H/sub 2/Se gas diluted in hydrogen. These precursors have been used in the past for metalorganic vapor phase epitaxy (MOVPE) of ZnSe thin films. Transmission electron microscopy (TEM), electron diffraction, and Raman spectroscopy were used to characterize the particles. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical for MOVPE systems.