MOVPE based Zn diffusion into InP and InAsP/InGaAs heterostructures

Zinc incorporation by post-growth MOVPE (metal-organic vapor phase epitaxy) based diffusion using DEZ (diethylzinc) as precursor into InP and InAs/sub 0.60/P epitaxial layers, grown by low pressure atmospheric MOVPE, has been studied systematically. High hole concentration levels of respectively 1.7/spl times/10/sup 19/ and 6/spl times/10/sup 18/ cm/sup -3/ are obtained for InAs/sub 0.60/P and InP. Diffusion depths were measured using cleave-and-stain techniques, electrochemical profiling, resistivity measurements and secondary ion mass spectroscopy. Hall measurements were used to check the hole concentrations. The diffusion depth can be controlled reproducibly within the investigated range from 0.5 to over 2.0 /spl mu/m. The diffusion coefficients for InP and InAs/sub 0.60/P were derived and the influence of the dislocation density of the InAs/sub 0.60/P layers on the Zn diffusion was investigated.