Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer

The objective of this work is to develop lateral 4H-SiC power devices that could be integrated into a monolithic high voltage power IC (HVIC) chip using thin RESURF layer. Junction isolation structure between neighboring devices can be easily achieved through mesa etch. This paper proposes a high breakdown voltage lateral RESURF MESFET structure and edge termination technique using epitaxially grown thin RESURF wafer.