Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management

In 5G applications when it comes to delivering high power at high frequencies, Gallium Nitride (GaN) is undeniably the best candidate for power amplifiers. However, device self-heating limits GaN-based high-electron-mobility-transistor (HEMT) performances significantly. The problem of self-heating can become acute in applications where the system requires to be light-weight and compact. Integration of diamond on GaN can ease the challenges associated with thermal management of GaN-based power amplifiers relying on highly scaled transistors to push toward higher frequencies at high powers. N-polar gallium nitride (GaN) based high electron mobility transistors (HEMTs) have shown superior performances at W-band frequencies. However, due to the shorter channel and closer gate fingers in the layout its ability to dissipate the heat from the channel to the heat-sink is limited. Diamond due to its very large thermal conductivity (TC) even in its polycrystalline (PC) form, is one of the most promising solutions for spreading out the heat to the heat sinks in these short channel devices.