6.7–15.3 GHz, High-Performance Broadband Low-Noise Amplifier With Large Transistor and Two-Stage Broadband Noise Matching

This letter presents a fully integrated wideband, ultralow average noise figure (NF), low power consumption, compact, and electrostatic discharge protected 6.7-15.3-GHz low-noise amplifier (LNA). A peak-gain distribution technique with a large transistor and two-stage broadband noise matching technique are proposed. For verification, a two-stage common source LNA is implemented in a 65-nm bulk complementary metal-oxide-semiconductor technology. The fabricated LNA achieved an average NF of 2.08 dB and an average gain of 19.1 dB with in-band gain ripple of ±0.75 dB in the frequency range of 7.6-14.7 GHz. It has a 3-dB fractional bandwidth of 78% and the third-order input intercept point is -9.0 dBm at 10 GHz. It consumes a 16 mA at a 0.8-V supply and has an area of 0.144 mm
²
.