Current-voltage characteristics of 4H-SiC diodes with Ni contacts

Summary form only given. Results of research on the electric properties of Ni contacts on n-type 4H-SiC are presented. The forward and reverse I-V measurements of Ni/4H-SiC Schottky rectifiers are demonstrated. The studies showed degradation of the structures over time. The lack of passivation probably caused the increase of leakage current. The scatter of Schottky diode parameters like the ideality factor, the saturation current density, the series resistance and the Schottky barrier height were studied. The Schottky barrier height was calculated from I-V characteristics measured at room temperature.