On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies

A novel electron beam detector made on Si wafers by the advanced CMOS FinFET processes has been proposed in this study. Through electron beam (e-Beam) charging of on-wafer sensing pads, electron dosage can be registered on the detector for follow-up read-out. Without external power or battery connections, this detector has successfully delivered on-chip dosage, intensity, and energy after e-Beam exposure.