A Study on Pixel Performance of DCG CMOS Image Sensor Through Optimizing Implant Condition

In this study, several ion implant condition was applied in Dual conversion gain CMOS image sensor for improving pixel performance. ISO and N3V implant condition, including energy and dosage, was discussed when P-well merge. Meanwhile, ISO process wad moved front before poly. WAT Test and Black white CP test were used to characterize pixel performance of DCG-CMOS. Device ITP and mobility chart showed the logical function working. Black dot improved approximately 40% while RTS noise get worse.