AlGaN/GaN HEMT with Recessed T-Gate and Floating Metal for High Power Applications

This paper presents a millimeter-wave wide bandgap material AlGaN/GaN heterojunction FET, also known as HEMT (high electron mobility transistors) for high frequency and high-power applications. This work employs the technique of recessed T-gate, which reduces gate resistance, helps to improve power consumption by reducing SCEs (short channel effects) and consists of floating metal with triple teeth (TT) located inside the buffer layer. The obtained fT and fMAX are 101 GHz and 530 GHz at VDS = 10 V with VGS = 0.4 V, respectively. Output power of 67.5 dBmW with power gain of 11.6 dB and power-added efficiency of 24.6% at VDS= 30 V, Continuous Wave at 10 GHz. The theoretical model of the device has been verified with the simulated results obtained from Atlas of Silvaco.