Parametric Analysis for Varied Gate Work function in Trigate n-channel FinFET

In this paper, a 3D Trigate FinFET having 14nm channel length is implemented and simulated with the help of Silvaco TCAD. The electrical characteristics such as I
_on
, I
_off
, the ratio of on to off current, threshold voltage and subthreshold swing are compared by varying the work function of the gate metal of the device. The results show that although the threshold voltage escalates on raising the work function of the gate but it also decreases the leakage current thereby improving the on to off current ratio. So the short channel effects of the n-channel Trigate FinFET devices can be optimized by controlling and adjusting the gate work function.