Strained SiGe Channel TFTs For Flexible Electronics Applications

For More-than-Moore (MtM) applications, the design and development of a strain-engineered flexible SiGe channel thin-film transistor (TFT) are reported for the first time. We demonstrate a simple and viable approach to realize strained-SiGe channel RF transistors on flexible plastic substrates using 3D technology CAD (TCAD) simulations. The device has great potential in low-power and high-speed flexible or stretchable electronics applications.