Simulation and Performance Analysis of novel InN-GaN-BTG-MOSFET

The paper presents a numerical simulation of novel Indium Nitride and Gallium Phosphide based GaN-BTG (Buffer Trenched Gate) MOSFET. The electrical characteristics such as Transfer characteristics, Transconductance, Electron mobility of InN-GaN-BTG-MOSFET and GaP-GaN-BTG-MOSFET are exhaustively analyzed using the Atlas TCAD tool. A comprehensive study is presented comparing the InN-GaN-BTG-MOSFET with GaN-BTG and GaP-GaN-BTG MOSFETs in terms of their performance characteristics. An improvement of 60.48% in SS and an increment of 47.16% in the electric field is observed which is because of the appliance of GaP and InN in the GaN-BTG structure. InN-GaN-BTG-MOSFET proves to be a promising structure to obtain enhanced performance for sub-20nm transistors and may be used for further scaling up the device.