Influence of dimensionality and stoichiometry in the electronic structure of InAs quantum dot solids

Periodic quantum dot solids are new materials in which quantum dots are periodically distributed in space. The properties of these materials are explored to find applications in new photovoltaic devices. In order to shed light on these future applications, investigating carrier transport and light absorption are of paramount importance. The first step to investigate these systems is to compute their electronic structures. In this work we present the electronic structure of one- (1D), two- (2D) and three-dimensional (3D) quantum dot solids made of 12 Å radius InAs quantum dots. Two different stoichiometries are studied. In the first case (system A) the quantum dot has an In atom in its center and the interdot contact surfaces along the (111) directions in the arrays are mainly arsenic atoms. In the second case (system B) the atomic positions are inverted, and therefore the contact surfaces between neighbours are mainly indium atoms. The influence of dimensionality and stoichiometry in these quantum dot solids are discussed.