Reconfigurable Logic-Memory Hybrid Device Based on Ferroelectric Hf0.5Zr0.5O2

In this letter, we demonstrate a reconfigurable logic-memory hybrid device (R-LMHD), which can be dynamically and reversibly switched between the logic- and memory- mode. The logic-mode device exhibits a 2.5×10
⁶
ON/ OFF current ratio and nearly zero hysteresis, which indicates the weak influence of defects trapping and de-trapping. The memory-mode device shows a large memory window up to 2.19 V and the window maintains up to 1.44 V after 10
⁶
program/erase cycles. The excellent performance can be attributed to the high crystalline quality of ferroelectric Hf
_0.5
Zr
_0.5
O
₂
(HZO) and the insertion of internal metal gate (IMG) between HZO and dielectric layer. Such R-LMHD features run-time tuning of threshold voltage and hysteresis, electrically reconfigurable. Furthermore, the subthreshold swing (SS) is electrically tunable with a minimum SS ( SS
_min
) of 35 mV/decade and a maintainability of sub-60 mV/decade about 3 orders. The R-LMHD provides a promising way to realize future in-memory computing and low power consumption applications.