Effect of Nickel material over the DC characteristics of a Silicon Nanowire Cylindrical MOSFET

This paper focuses on designing a Cylindrical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Sentaurus Technology Computer Aided Design (TCAD). By using Silicon as a nanowire channel layer, and HfO
₂
as a high-k dielectric oxide layer, the DC characteristics for the device are evaluated. A Nickel layer is grown above the Silicon channel, and the variation in current drive is observed. Drain current in the device is optimized using the oxide material HfO
₂
. A peak drain current of 15.1 μA. The current drive has also been analyzed by varying the work function of the back-gate metal and finding the optimum work function in correspondence with the Nickel material. Since a toxic material like Nickel could induce the risk of cancer, the variation in current drive directly influences the sensing capabilities of the transistor, if the device is developed into a biosensor.