Snap-back free 3.3kV RC-IGBT with enhanced safe operating area

In this paper we present a snap-back free 3.3kV, 75A Reverse Conducting IGBT (RC-IGBT) with improved Reverse Bias (RBSOA) and Short-Circuit (SCSOA) Safe Operating Areas. The device employs floating N+ regions under the gate BUSBARs to locally reduce hole concentration and uses segmented N+ Anode regions to minimise the reverse recovery losses. The device architecture was conceived on extensive TCAD modelling and a DOE approach. The best design variants have been manufactured, tested and used for extensive analysis of key device trade-offs.