A Cost Effective and Highly Manufacturable Approach to Extend a BCD 70V Technology to 200V

A cost effective method to extend a 70V bulk BCD technology to a 200V SOI BCD technology is presented. The new approach replaces the floating n-type buried layer (NBL) in the bulk technology with the buried oxide (BOX) in silicon-on-insulator (SOI). Compatibility for low voltage and medium voltage devices up to 70V in maintained between the two technologies and competitive figure of merit with robust reliability for 120-200V devices is demonstrated.