Comprehensive Study on Electrical Characteristics in 1.2 kV SiC SBD-integrated Trench and Planar MOSFETs

This study investigated the static and dynamic characteristics of a 1.2 kV SiC SBD-integrated trench MOSFET (SWITCH-MOS) and an SBD-integrated planar MOSFET. The SWITCH-MOS exhibited superior switching characteristics to the planar type MOSFET, while showing low specific on-resistance (R
_on,sp
). This is because the SWITCH-MOS has an SBD-wall trench structure and larger SBD area per unit cell than the planar type MOSFET, and the unipolar operation of the embedded SBD in the SWITCH-MOS can be maintained even at high current under high temperature. In addition, the SWITCH-MOS has smaller C
_rss
owing to the p+ regions at trench gate bottom, resulting in higher dV
_ds
/dt during both turn-on and turn-off operations. Furthermore, the SWITCH-MOS showed superior R
_on,sp
- SCSOA trade-off characteristics.