Gate drive techniques of Gate-connected Trench Field Plate Power MOSFETs to reduce both switching and conduction losses

We proposed new gate drive techniques of Gate-connected Trench Field Plate (Gate FP) Power MOSFETs. Compared with a Source-connected Trench Field Plate (Source FP) device, the Gate FP is hardly used for high speed switching applications because large feedback capacitance (Crss) prevents high speed Turn-ON / OFF and causes shoot-through. We propose gate driving method which realizes pseudo independent Gate and FP driving by using a conventional gate driver with small number of additional components. The concept was verified by TCAD mixed-mode simulation. The results demonstrated the proposed method showed almost as the same switching performance as the Source FP and suppressed shoot-through successfully.