Comprehensive Investigation on Electrical Properties of 4H-SiC VDMOS Under Uniaxial and Biaxial Mechanical Strains

In this paper, we have comprehensively stud-ied the performance boosts of 4H-SiC VDMOS under the mechanical strain. The electrical properties of 4H-SiC VDMOS under the biaxial and uniaxial tensile and compressive strains along the channel direction are examined thoroughly. We find that the biaxial and uniaxial compressive strain benefit the VDMOS, and the biaxial and uniaxial tensile strain loss the VDMOS. Because the mechanical strain affects carriers' transportation in 4H-SiC's inverted channel distinctly, the strain effects are strongly correlated with the gate voltage. It shows that the mechanical strain can enhance the drain current to a greater degree at lower gate voltage, and it also shows that both biaxial and uniaxial strain can cause threshold voltage's shift.