1200V Bidirectional FS-IGBT (BFS-IGBT) with Superior Turn-Off Capability

In this paper, we propose Bidirectional Field-Stop IGBT (BFS-IGBT) and demonstrate its very fast turn-off capability. BFS-IGBT is characterized by the same thin N-base thickness as that of FS-IGBTs, and thus, superior to conventional bidirectional IGBTs. The device characteristics can be widely tuned by controlling the Anode side gate bias. By applying special sequence to the Anode side gate, 75% reduction of turn-off loss is realized compared with conventional FS-IGBTs. We also propose a new edge termination structure, which enables double sided blocking capability in spite of the thin N-base thickness.