Low Temperature Bonding with Wafer Level Nanocrystalline Cu Film

Low temperature bonding of wafers with thin nanocrystalline metal film was a critical method on wafer-to-wafer bonding. This paper had finished the thin nanocrystalline Cu films wafer level bonding at 150 °C for 1 h under a contact force of 75 kN, and the average bonding energy was 11.94 J/m². The nanocrystalline Cu could be helpful for low temperature bonding and strong bonding energy was practically calculated by blade test.