Wide band Metamaterial Absorber for Gallium Arsenide GaAs solar cells

in this work the perfect absorption characteristics of a tungsten (W) based hexagonal resonator based metamaterial absorber for solar cell applications was investigated. The paper shows the maximum absorption of the solar cell created by using Silicon and Gallium Arsenide (GaAs) material. The proposed metamaterial absorber has the potential to improve the absorption rate over a wide band frequency spectrum of 502 THz to 678 THz, with the peak absorption occurring at 550 THz and 650 THz. It is a unit cell that is made up of three layers: named as the substrate or base layer, the intrinsic layer or middle layer, and the top conducting layer or the metamaterial layer. The parametric analysis of the metamaterial absorber is carried out in the total frequency range of 450THz to 750THz with different measurements of the unit cell. The metamaterial is constructed in such a manner, the top conducting layer may have a higher absorption rate. And absorption and reflection parameters are used to describe the variations. The observations in this work reveals that the absorptivity depends on the resonator used on the top layer with its material properties. An absorber of this kind will be useful for solar cell, solar heating, and integrated optics applications.