Minimum Contact Resistance in Monoelemental 2D Material Nanodevices With Edge-Contacts

We use atomistic quantum transport device simulations to investigate the contact resistance ( R
_C
) in monoelemental 2D material nanoribbon MOSFETs with edge contacts. The consequences of attaching metal electrodes to source/drain regions are investigated for various metal-channel interaction strengths and nanoribbon dimensions. We find that R
_C
is minimized by using moderately interacting metallic materials, and that the minimum R
_C
is ~ 150 Ω·μm in graphene, silicene and germanene, and ~ 430 Ω·μm in phosphorene nanodevices with edge contacts.