High Temperature Behaviors of 1–2.5 μm Extended Wavelength In₀.₈₃Ga₀.₁₇As Photodetectors on InP Substrate

The dark current and the photo response characteristics of extended wavelength In
_0.83
Ga
_0.17
As/InP photodetectors (PDs) with n-In
_0.83
Ga
_0.17
As absorber doped to
${8}\times {1}^{{15}}$
,
${7}\times {10}^{{16}}$
and
${1}\times {10}^{{17}}{\mathrm {cm}}^{{-3}}$
are investigated in an elevated temperature range of −40 to 100°C. The lightly doped PD exhibits a lower (higher) dark current than the heavily doped PD at temperatures higher (lower) than 30°C. The photocurrent, the spectral responsivity and the blackbody response voltage for the heavily doped PD rapidly decrease at temperatures higher than 30°C, while remain almost unchanged until 90°C for the lightly doped PD. The trend of the intermediately doped PD is between the two. In contrast, a consistently increasing trend of the dark noise over the whole measured temperature range are observed for three PDs. Theoretical calculations indicate such behaviors are essentially related with the temperature-dependent variation of the Shockley-Read-Hall lifetimes under different doping concentration.