Improving High-Temperature Energy Storage Performance of Silicon-Integrated Oxide Film Capacitors via Inserting a Graphene Buffer Layer

The demand for high-temperature energy storage capacitors arises to meet the noticeable increase in integration density of electronic devices. In pursuit of optimized energy storage performance at elevated temperatures, 0.85BaTiO
₃
–0.15Bi(Mg
_0.5
Zr
_0.5
)O
₃
(BT-BMZ) thin film capacitors were prepared on graphene/silicon substrate in this work. Taking advantage of remarkable lateral heat dissipation ability of graphene, the dielectric breakdown strength has been promoted from 7.14 MV
$\cdot $
cm
⁻¹
to 7.97 MV
$\cdot $
cm
⁻¹
by inserting a graphene buffer layer at room temperature. Thus, an enhancement in energy storage density is also observed. Notably, the improvement is more significant with temperature increase. The energy storage density of BT-BMZ/graphene/Si is gained 150% to 34.84
$\text{J}\cdot $
cm
⁻³
in comparison to BT-BMZ/Si (13.96
$\text{J}\cdot $
cm
⁻³
) at 125 °C. The results reveal that thermal management is an effective way to improve high-temperature energy storage performance of dielectric film capacitors and prove that transferred monolayer graphene is a promising material for heat dissipation of silicon integrated devices.