Bending Analysis Of A Piezoelectric Semiconductor Composite Beam With Flexoelectricity

Piezoelectric semiconductors (PSs), possessing the characteristic of deformation-polarization-carrier multi-field coupling, have been widely used in energy harvesters, field-effect transistors, and other intelligent devices. It is very important to investigate the effect of the polarization field only induced by flexoelectricity on piezotronic behaviors of PS nanostructures. We propose a sandwich-type PS composite beam with bending deformation, and develop the one-dimensional model for PS composite beams with flexoelectricity. Through introducing the average electric field in the thickness, we can get rid of the contribution from piezoelectricity to the total induced polarization, as a result, the individual effect of flexoelectricity on the macroscopic multi-field coupling behaviors of the bending composite beam can be evaluated.