Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfacial Layer

In this article, a β-Ga
₂
O
₃
metal-interlayer-semiconductor Schottky barrier diode (MIS-SBD) using Al-reacted aluminum oxide as the interlayer is demonstrated for the first time and compared with conventional metal-semiconductor (MS) Schottky barrier diode (SBD). The aluminum oxide is formed by sputtering a thin Al layer on Ga
₂
O
₃
substrate and then annealed in O
₂
at 300 °C. With the insertion of Al-reacted interlayer, the SBD subthreshold swing (SS) is significantly improved to 61 mV/dec with an average current range of >6 orders. Example of atomic layer deposited (ALD) Al
₂
O
₃
as the interlayer is also fabricated and characterized. J- V study corrected by Gaussian distribution model shows that all the samples statistically exhibit similar mean barrier heights (BHs). This indicates that the interlayer hardly affects the electrostatic field and band bending as experienced by carrier injections. C- V study provides different BH results in different sample setups. The result proves that Al-reacted interfacial layer helps eliminate interface degradation as compared with ALD Al
₂
O
₃
. Overall, MIS-SBD by Al-reaction method exhibits improved SS, reduced reverse leakage current ( I
₀
), low ideality factor, good ON-OFF ratio ( $> 10^{9}$ ), and minimized interface charges as compared with its respective counterparts. The result of this article serves as a promising interface engineering technique for Ga
₂
O
₃
-based SBD designs.