Back-Gate Network Extraction Free from Dynamic Self-Heating in FD SOI

Back-gate and substrate networks modeling of FD SOI MOSFETs is crucial for RF and mm-wave applications due to their impact on RF performance. However, usual substrate models rely on the source to drain coupling through the back-gate, which appears in the same frequency range as the dynamic self-heating effect in such devices. This paper provides equations enabling dynamic self-heating removal from measurements to obtain isothermal Y-parameters, based on the knowledge of the frequency-dependent complex thermal impedance. This work shows that a large error on the back-gate related small-signal equivalent circuit, as well as on the output conductance, can be made if they are extracted without removal of dynamic self-heating.