TCAD Validation of an Intercept-at-Zero-Gate-Length MOSFET Series Resistance Extraction Method

An Intercept-at-Zero-Gate-Length (IZL) method for MOSFET series resistance extraction was carefully examined using TCAD simulations. The results show that the method is useful even for highly non-uniform strong halo devices in spite of the fact that it is based on traditional resistance vs. gate length plots.