CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application

In this work, we successfully fabricated AlGaN/GaN HEMT on 8-inch GaN-on-Si wafer utilizing CMOS BEOL compatible process, and demonstrate an AlGaN/GaN HEMT with L
g
= 250nm reaching f
t
/f
max
= 50/44 GHz. By semi-automatic RF measurements mapping in complete 8-inch wafer area, results exhibit average f
t
= 48GHz with NU = 7.6% and average f
max
= 42GHz with NU = 5%, revealing the outstanding uniformity of 8-inch standard CMOS manufacturing tools.