High-Performance WSe₂ n-Type Field-Effect Transistors Enabled by InOₓ Damage-Free Doping

Polarity regulation is the biggest obstacle to the application of two-dimensional materials in logic circuits. Here, we demonstrate an innocuous doping strategy for modulating the polarity of WSe
₂
field-effect transistors (FETs). The substoichiometric indium oxide (InO
_x
) was employed to realize the n-type WSe
₂
FETs. In stark contrast to others reporting the reduction of electron-dominant current with n-type metal/oxide doping, the InO
_x
-doped strategy demonstrated herein facilitates superior electron-dominant current, which can be attributed to the van der Waals interface between InO
_x
and WSe
₂
. Furthermore, the InO
_x
-doped n-type FET was connected with the undoped p-type FET to construct an inverter, which exhibited an ultrahigh Gain exceeding 120 with a full width at half of the maximum gain of only 30 mV and total noise margin around 80%. The damage-free doping strategy allowed the integration of complementary WSe
₂
FETs with impressive performance, thereby paving the way for practical applications in WSe
₂
integrated circuits.