Effect of Different De-Embedding Techniques on Small-Signal Parameters of X-Band Low-Noise Amplifier

In most cases researchers consider existing de-embedding techniques in terms of characterization accuracy of the monolithic microwave integrated circuit component where an emphasis is put on the upper limit of the frequency range. In real practice, when faced with a choice of the de-embedding technique, one must take into account a number of additional factors, such as target application field of the component, manufacturing capabilities and production costs. In this paper we compare existing de-embedding techniques in the context of GaAs pHEMT-based two-stage low-noise amplifier monolithic microwave integrated circuit design. Firstly, we analyze several de-embedding techniques valid for pHEMTs with both coplanar and microstrip accesses and outline differences in de-embedded active bias S-parameters. Then, for each of the considered de-embedding technique we estimated the overall effect on low-noise amplifier small-signal characteristics, the total wafer area occupied by various de-embedding structures and flexibility of a technique regarding characterization of several active and passive devices with different pad distance and feed line length located on the same wafer.