Ultrascaled Multidomain P(VDF-TrFE) Organic Ferroelectric Gate Stack to the Rescue

The idea of harnessing the negative capacitance signature (NCS) effect in a ferroelectric (FE) material is a recent entry in the world of nanoelectronics. There is an urgent need to harness this effect at a minimum supply voltage (VA). Therefore, in this paper, we have investigated the transient NCS response in a series resistor (R)-organic FE (OFE) (RC
_OFE
) circuit at ±0.4 V employing a well-calibrated multidomain Ginzburg-Landau-Khalatnikov model in Sentaurus technology computer-aided design (STCAD) environment. A remarkable average coercive voltage reduction of about 69 to 90.16 % is achieved concerning different literature reports. The proposed OFE gate stack (OFEGS) can capture the NCS effect even at ±0.4 V, while its counterpart FE hafnium dioxide (HfO2) based gate stack fails to harness the NCS and behaves like a positive linear capacitor. The various influence of the Landau parameters, R, and switching resistivity (ρ
_OFE
) on the transient NCS behavior are significantly investigated. We found that the NCS response time (δ
_t
) and the NCS voltage window (δV
_NCS
) accentuate as R increases. The δt in the proposed OFEGS is much faster (99.77 to ~99.88 %) than its state-of-the-art counterparts. Finally, our OFEGS can capture the maximum δV
_NCS
by coming close to the ideal Landau path with a negligible deviation of about ±0.009 V at zero FE polarization. Therefore, the proposed device capturing NCS with a small V
_A
of ±0.4 V, total switched charge density of 2.54 μC/cm
²
, and lower energy dissipation of 0.95 fJ could act as a rescuer for many standard transistors from the Boltzmann's Tyranny.