Wide-Band Low Noise Power Amplifiers Covering 2.4 to 7.1 GHz

A radio frequency amplifier, preliminarily based on Class-E power amplifier mechanism, is proposed by using the CMOSFET devices fabricated through TSMC 0.18 micron process, which are implemented in Agilent ADS for the circuit designs. Two center working frequencies, 5.0 GHz and 6.0 GHz are deliberately targeted by adjusting the inductance and the capacitance. S11 and S22 are tuned to fit the impedance matching, and S12 for isolation is proved to be down below about -40dB. The resulting gain (S21) is expected to be higher than 20dB. The applicable frequency range is then demonstrated to be as wide as 4.5GHz, which is quite encouraging even though the most proper working frequency in located in between 5GHz and 6GHz. The minimum noise figures (NF
_min
) are less than 1.0 at the center working frequency 5.0GH and l.2 at 6.0GHz. The promising results promote the radio frequency application as a low noise power amplified.