Stress analysis of SiO/sub 2//Ta/Pt/PZT/Pt stack for MEMS application

Stress analysis of accumulated, individual, and removed layer stress was performed for the Si/SiO/sub 2//Ta/Pt/PZT/Pt stack consisting of sol-gel deposited lead zirconate titinate (PZT 52/48) thin films. The final accumulated stress of the stack normalized to a tensile value of 175 MPa. The as-deposited condition of the individual layers SiO/sub 2/, top and bottom Pt layers were initially compressive but changed to tensile after annealing. The stress of the removed layer (induced stress) was relatively high for the bottom Pt layer.