Controlled metal-organic chemical vapor deposition of ferroelectric thin films

The metal-organic chemical vapor deposition (MOCVD) of ferroelectric thin films is being widely investigated for the manufacture of devices requiring both volatile and non-volatile memory. The consistent deposition of multicomponent thin films with uniform characteristics requires superior hardware engineering to control a large number of variables. Well known for its success in engineering III-V multicomponent thin film reactors, AIXTRON has combined liquid delivery system and showerhead designs with its established knowledge of temperature and pressure control for the deposition of strontium bismuth tantalate (SBT) and other ferroelectric chemistries. Among the important aspects of SBT MOCVD to be studied are the control of Sr and Ta incorporation and conformal coverage. Data on these two aspects of SBT thin film deposition are reported here.