Optimal Design of DDR3 STT-MRAM Memory

The spin-transfer torque magnetoresistive random access memory(STT-MRAM) has a potential business value due to its low power consumption and non-volatile. It can apply in the smart wearable device, industrial equipment, and other fields. By combining the double data rate three (DDR3) controller and STT-MRAM to make a complete storage system. We propose a method of parallel reading and writing in the storage system. By comparing the delayed data of parallel and serial read and write modes in different storage capacities. The proposed method can improve the efficiency of the system.