Seed layer dependent bottom pinned magnetic tunnel junctions

Tunnel magnetoresistance (TMR) has been widely researched in sensor applications. The choice of seed layer materials has an important influence on the performance of sensors. Here, the effect of Ta/Ru, NiFeCr and Ta/NiFe seed layers on the TMR sensors are investigated. It is shown that the different structure caused by seed layers can affect the performance of TMR. By changing seed layers, the TMR multilayers can be tuned to satisfy the demand of applications.