Self-Reactive Etching of β-Ga2O3for Fabricating Trench Schottky Barrier Diodes

A novel etching technique with negligible etching damage for β-Ga
₂
O
₃
has been proposed in this paper. With employment of this process called self-reactive etching (SRE), the fabricated β-Ga
₂
O
₃
trench Schottky barrier diodes (SBDs) possess a high-quality surface and show excellent electric characteristics. Attributing to the low negative interface charges at the sidewall depletion of the β-Ga
₂
O
₃
fin-channels, an ideality factor of 1.41 and a low interface states density of 2.9×10
¹¹
cm
^-2
eV
^-1
were realized.