Opto-Electric resistive switching and synaptic emulation in lead-free perovskite film

Here we demonstrate a lead-free methyl ammonium bismuth iodide (MBI) perovskite based electrochemical metallization dependent resistive RAM (Re-RAM) device. The devices exhibited multi-bit storage ability and a sturdy ON/OFF ratio of 10
⁴
. Complete change to ON state with coupled optical and sub-threshold electrical inputs was observed. The MBI Re-RAM cell also displayed paired pulse facilitation and potentiation-depression behavior thereby establishing its feasibility in neuromorphic computing applications.