Persistent Spin Helix-Based Spin Field Effect Transistor

Spintronic device is promising due to their potential merits of low power consumption and fast operation. In this work, we present the effect of persistent spin helix, barrier resistance, spin polarization and channel resistance on the magnetoresistance of spin field effect transistor (FET) when the channel material carries strong spin-orbit coupling (SOC) and persistent spin helix (PSH). Our device shows promising spintronic performance with current device technologies.