Performance Evaluation of Negative Capacitance Reconfigurable Field Effect Transistor for Sub 10 nm Integration

A dual-gate negative capacitance reconfigurable field effect transistor (NC-RFET) is proposed in present work. Combining with 3D TCAD simulation with Landau-Khalatnikov equation, critical electrical parameters such as surface potential, gate capacitance, and sub-threshold swing are evaluated to characterize the negative capacitance through the post-processing method. The design criterion for NC-RFET is obtained by analyzing the impact of some critical physical parameters.